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Ordering number : ENA0383
TIG032TS
SANYO Semiconductors
DATA SHEET
TIG032TS
Features
* * * * * *
N-Channel IGBT
Light-Controlling Flash Applications
Low-saturation voltage. Low voltag drive (2.5V). Enhansment type. Built-in Gate-to-Emitter protection diode. Mounting Height 1.1mm, Mounting Area 19.2mm2. dv / dt guarantee.*
Specifications
Absolute Maximum Ratings at Ta=25C
Parameter Collector-to-Emitter Voltage Gate-to-Emitter Voltage (DC) Gate-to-Emitter Voltage (Pulse) Collector Current (Pulse) Maximum Collector-to-Emitter dv / dt Channel Temperature Storage Temperature Symbol VCES VGES VGES ICP1 ICP2 dVCE / dt Tch Tstg PW1ms PW500s, duty cycle0.5%, CM=400F, VGE=2.5V PW500s, duty cycle0.5%, CM=400F, VGE=4V VCE320V, starting Tch=25C Conditions Ratings 400 6 8 150 180 400 150 --40 to +150 Unit V V V A A V / s C C
Electrical Characteristics at Ta=25C
Parameter Collector-to-Emitter Breakdown Voltage Collector-to-Emitter Cutoff Current Gate-to-Emitter Leakage Current Symbol V(BR)CES ICES IGES Conditions IC=2mA, VGE=0V VCE=320V, VGE=0V VGE=6V, VCE=0V Ratings min 400 10 10 typ max Unit V A A
Marking : G032
Continued on next page.
* : Conduct 100% screening of dv / dt (slope of collector voltage at the time of turn-off) by dv / dt>400V/s.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
41107PJ TI IM TC-00000663 No. A0383-1/5
TIG032TS
Continued from preceding page.
Parameter Gate-to-Emitter Threshold Voltage Collector-to-Emitter Saturation Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol VGE(off) VCE(sat)1 VCE(sat)2 Cies Coes Cres Conditions VCE=10V, IC=1mA IC=150A, VGE=2.5V IC=180A, VGE=4V VCE=10V, f=1MHz VCE=10V, f=1MHz VCE=10V, f=1MHz Ratings min 0.4 3.4 3.3 5100 59 43 typ max 1.0 4.8 4.7 Unit V V V pF pF pF
Package Dimensions
unit : mm (typ) 7006A-007
0.95
Electrical Connection
3.0
0.125
8
7
6
5
8
5
0.5
1
0.95
4
0.25 0.65
0.05
1.0
1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate SANYO : TSSOP8
1 : Collector 2 : Collector 3 : Collector 4 : Collector 5 : Emitter 6 : Emitter 7 : Emitter 8 : Gate
1 2 3 4
6.4 4.5
Top view
Large Current R Load Screening Circuit
0.425
RL=1.7 + CM=400F RG=80 VCC=325V
TIG032TS 4.0V 0V 100k
Note1. Gate Series Resistance RG47 is recommended for prolection purpose at the time of turn OFF. However, if dv / dt400V / s is satisfied at customer's actual set evaluation, RG<47 can also be used. Note2. The collector voltage gradient dv / dt must be smaller than 400V / s to protect the device when it is turned off.
No. A0383-2/5
TIG032TS
200
IC -- VCE
V GE =4 .5V
4. 0V
Tc=25C
200
IC -- VGE
Tc=25C VCE=5V
180
Collector Current, IC -- A
Collector Current, IC -- A
5.0
160 140 120 100 80 60 40 20 0 0 1.0 2.0
V 3.0
180 160 140 120 100 80 60 40 20 0
2.5V
1.8V
3.0
4.0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
Collector-to-Emitter Voltage, VCE -- V
6.0
IT12265 6.0
VCE -- VGE
Gate-to-Emitter Voltage, VGE -- V
IT12266
VCE -- VGE
Tc= --25C
Tc=25C
Collector-to-Emitter Voltage, VCE -- V
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 6 IT12267
Collector-to-Emitter Voltage, VCE -- V
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 6 IT12268
IC=180A
150A
130A
IC =180A
150A 130A
Gate-to-Emitter Voltage, VGE -- V
6.0
Gate-to-Emitter Voltage, VGE -- V
8
VCE -- VGE
Tc=75C
VCE(sat) -- Tc
VGE=2.5V
Collector-to-Emitter Voltage, VCE -- V
5.5 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0 1 2 3 4 5 6 IT12269
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
7 6 5 4 3 2 1 0 --50
IC =180 A
150A
130A
0A I C=15 130A
--25
0
25
50
75
100
125
150
Gate-to-Emitter Voltage, VGE -- V
5.0 4.5
Case Temperature, Tc -- C
IT12270
VCE(sat) -- Tc
VGE=4V
Gate-to-Emitter Cutoff Voltage, VGE(off) -- V
0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 --50
VGE(off) -- Tc
Collector-to-Emitter Saturation Voltage, VCE(sat) -- V
4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 --50 --25 0 25 50 75 100 125 150
0A I C=18
150A 130A
--25
0
25
50
75
100
125
150
Case Temperature, Tc -- C
IT12271
Case Temperature, Tc -- C
IT12272
No. A0383-3/5
TIG032TS
5 3
SW Time -- ICP
Switching Time, SW Time -- ns
Switching Time, SW Time -- ns
2
RL=2, Tc=25C VGE=2.5V, RG=50 PW=50s
tf
5 3 2 1000 7 5 3 2 100 7 5 3
SW Time -- ICP
tf
RL=2, Tc=25C VGE=4V, RG=50 PW=50s
td(off)
1000 7 5 3 2
td (off)
tr
td(on)
tr
td(on)
2 3 5 7 100 2 3
100 7 5 10 2 3 5 7 100 2 3
2 10
10000 7 5 3 2 1000 7 5 3 2 100 7 5 3 2 10 0
Cies, Coes, Cres -- VCE
Cies
Collector Current (Pulse), ICP -- A
IT12273 600
Collector Current (Pulse), ICP -- A
IT12274
Turn OFF dv / dt -- RG
500
Turn OFF, dv / dt -- V / s
Cies, Coes, Cres -- pF
Xe -Tube Load VCC=330V, ICP=130A, VGE=2.5V, PW=50s Driver : SANYO TND724M
400
300
Coes
Tc=25C VGE=0V f=1MHz
2 4 6 8
200
Cres
100
10
12
14
16
18
20
0 0
10
20
30
40
50
60
70
80
90
100
Collector-to-Emitter Voltage, VCE -- V
200 180 160 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 7
IT12275 450 400
Gate Series Resistance, RG --
IT12276
ICP -- VGE
CM -- ICP1
Collector Current (Pulse), ICP -- A
CM=400F VCM=320V
Tc=25C
Maximum Capacitor, CM -- F
350 300 250 200 150 100 50 0
VCM=320V Tc70C VGE=2.5V RG47
0 20 40 60 80 100 120 140 160
8 IT10930
Gate-to-Emitter Voltage, VGE -- V
450 400
CM -- ICP2
Collector Current (Pulse), ICP -- A
IT10931
Maximum Capacitor, CM -- F
350 300 250 200 150 100 50 0 0
VCM=320V Tc70C VGE=4V RG47
20 40 60 80 100 120 140 160 180 200
Collector Current (Pulse), ICP -- A
IT10932
No. A0383-4/5
TIG032TS
Note : TIG032TS has protection diode between gate and emitter but handling it requires sufficient care to be taken.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above.
This catalog provides information as of April, 2007. Specifications and information herein are subject to change without notice.
PS No. A0383-5/5

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